MMBT2369A(1997) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
MMBT2369A Datasheet PDF : 14 Pages
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NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CES
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, VBE = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCB = 20 V, IE = 0, TA = 125°C
15
V
40
V
40
V
4.5
V
0.4
µA
30
µA
ON CHARACTERISTICS
hFE
DC Current Gain*
IC = 10 mA, VCE = 1.0 V
40
120
IC = 10 mA,VCE = 0.35 V,TA =-55°C 20
IC = 100 mA, VCE = 1.0 V
20
VCE(sat)
Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA,TA =125°C
0.2
V
0.3
V
IC = 30 mA, IB = 3.0 mA
0.25
V
IC = 100 mA, IB = 10 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
0.7
0.85
V
IC = 10 mA, IB = 1.0 mA,TA = -55°C
1.02
V
IC = 10 mA, IB = 1.0 mA,TA= 125°C 0.59
V
IC = 30 mA, IB = 3.0 mA
1.15
V
IC = 100 mA, IB = 10 mA
1.6
V
SMALL SIGNAL CHARACTERISTICS
Cobo
Cibo
hfe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
VCB = 5.0 V, IE = 0, f = 1.0 MHz
VEB = 0.5 V, IC = 0, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
RG = 2.0 kΩ, f = 100 MHz
4.0
pF
5.0
pF
5.0
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-On Time
toff
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IB1 = IB2 = IC = 10 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.0 mA, IB2 = 1.5 mA
13
ns
12
ns
18
ns
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
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