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CLP30-200B1(1999) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
CLP30-200B1
(Rev.:1999)
ST-Microelectronics
STMicroelectronics 
CLP30-200B1 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Fig.8 : TEST CIRCUIT FOR ISWOFF PARAMETER : GO - NO GO TEST
TIPL or RINGL
R
CLP30-200B1
BAT = - 48 V
D.U.T.
GND
-V
Surge
generator
This is a GO-NO GO test which allows to confirm the switch-off current (IH) level in functional test
circuit.
TEST PROCEDURE
- Adjust the current level at the ISWOFF value by short circuiting the D.U.T
- Fire the D.U.T with a surge current : IPP = 10 A, 10/1000 µs
- The D.U.T will come back to the off-state within a duration of 50 ms max.
Fig. 9 : Typical variation of switching-on current
(positive or negative) versus RSENSE resistor and
junction temperature (see test condition Fig. 11).
Iswon negative surge ( mA )
1000
Iswon - @ 0°C Iswon - @ +25°C Iswon - @ +70°C
Fig. 10 : Variation of switching-on current versus
RSENSE at 25 °C.
Iswon @ 25°C ( mA )
1000
Iswon + min Iswon + max Iswon - min Iswon - max
Rsense ( Ohms )
100
1.6
3
6
Fig. 11 : ISWON MEASUREMENT
- ISWON = l1 when the CLP30-200B1 switches on (l1 is
progressively increased using R)
- Both TIP and RING sides of the CLP30-200B1 are
checked
- RL = 10.
RL
R sense
I1
± 48 V
TIPL TIPS
R
DUT GND
RINGL RINGS
Rsense ( Ohms )
100
1.6
3
6
fig. 12 : Relative variation of switching-off current
versus junction temperature (for RSENSE between
3 and 10 ).
ISWOFF [Tj°C] / ISWOFF [25°C]
1.4
1.2
1
0.8
0.6
0.4
0
20
40
60
80
Temperature (°C)
9/11

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