2SB1184TL Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB1184TL

Power Transistor (−60V, −3A)

ROHM Semiconductor 

2SB1184 / 2SB1243

Packaging specifications and hFE

Package

Type

2SB1184

2SB1243

Code

hFE Basic ordering unit (pieces)

QR

QR

hFE values are classified as follows :

Item

Q

R

hFE

120 to 270 180 to 390

Taping

TL

TV2

2500

2500

−

−

Electrical characteristic curves

−10

VCE= −3V

−5

−2

−1

Ta=100°C

−0.5

25°C

-25°C

−0.2

−0.1

−0.05

−0.02

−0.01

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter

propagation characteristics

−3.0

−2.5

−2.0

−50mA

−45mA

−40mA

−35mA

−30mA

−25mA

Tc=25°C

−20mA

−15mA

−1.5

−10mA

−1.0

−5mA

−0.5

IB=0mA

00

−1

−2

−3

−4

−5

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics ( )

1000

500

Ta=25°C

200

VCE=−5V

100

50

−3V

20

10

5

2

1

−0.01−0.02 −0.05 −0.1−0.2 −0.5 −1 −2

−5 −10

COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs.

collector current ( )

−10

−5

Ta= −25°C

−2

25°C

100°C

−1

−0.5

lC/lB=10

VBE(sat)

−0.2 Ta=100°C

−0.1

25°C

−25°C

−0.05

VCE(sat)

−0.02

−0.01

−0.01 −0.02 −0.05 −0.1 −0.2

−0.5 −1 −2

−5 −10

COLLECTOR CURRENT : IC (A)

Fig.7 Collector-emitter saturation voltage

vs. collector current

Base-emitter saturation voltage vs.

collector current

1k

500

Ta=100°C

25°C

200

−25°C

100

50

VCE= −3V

20

10

5

2

1

−0.01−0.02 −0.05−0.1−0.2 −0.5 −1 −2

−5 −10

COLLECTOR CURRENT : IC (A)

Fig.5 DC current gain vs.

collector current ( )

1000

500

Ta=25°C

VCE= −5V

200

100

50

20

10

5

2

1

12

5 10 20 50 100 200 5001000

EMITTER CURRENT : IE (mA)

Fig.8 Gain bandwidth product vs.

emitter current

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○c 2010 ROHM Co., Ltd. All rights reserved.

Data Sheet

−3.0

−50mA

−45mA

−2.5

−40mA

−35mA

−30mA

−2.0

−25mA

−20mA

−15mA

−1.5

−10mA

−1.0

Tc=25°C

−0.5

0

0

IB=−5mA

PC=15W

IB=0mA

−10 −20 −30 −40 −50

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output

characteristics ( )

−10

Ta=25°C

−5

−2

−1

−0.5

−0.2

−0.1

−0.05

IC/IB=50/1

20/1

−0.02

10/1

−0.01

−0.01−0.02 −0.05−0.1−0.2 −0.5 −1 −2 −5 −10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-emitter saturation

voltage vs.collector current

1000

500

200

100

50

Ta=25°C

f=1MHz

IE=0A

20

10

5

2

1

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.9 Collector output capacitance vs.

collector base voltage

2010.02 - Rev.C

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