2N2955G-T47-Y(2017) Ver la hoja de datos (PDF) - Unisonic Technologies
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2N2955G-T47-Y Datasheet PDF : 3 Pages
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2N2955
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( TA=25C ,unless otherwise specified )
PARAMETERS
SYMBOL
RATINGS
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
60
V
VEBO
7
V
Collector-Emitter Voltage
Collector Current
VCEV
70
V
IC
15
A
Collector Peak Current (Note)
Base Current
ICM
15
A
IB
7
A
Base Peak Current (Note)
IBM
Total Dissipation at TA=25C
TO-247
TO-3
PD
15
A
90
W
115
W
Max. Operating Junction Temperature
TJ
+200
C
Storage Temperature
TSTG
-65 ~ 200
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining
Voltage
Collector-Emitter Sustaining
Voltage
VCEO(SUS) IC=200mA, IB=0V
VCER(SUS) IC=0.2 A, RBE=100Ω
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ICEO
ICEX
IEBO
VCE=30V,IB=0
VCE=100V, VBE(OFF)=1.5V
VCE=100V, VBE(OFF)=1.5V,
Ta=150C
VBE=7V, IC=0
ON CHARACTERISTICS
DC Current Gain (Note)
Collector-Emitter Saturation
Voltage
Base-Emitter On Voltage
hFE
VCE(SAT)
VBE(ON)
IC=4A,VCE=4V,
IC=10A,VCE=4V
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with
Base Forward Biased
Is/b
VCE=60V, T=1.0s, Non-repetitive
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT IC=0.5A, VCE=10V, f=1MHz
Small-Signal Current Gain
hFE IC=1A, VCE=4V, f=1kHz
Small-Signal Current Gain
Cut-off Frequency
fhFE IC=1A, VCE=4V, f=1kHz
Note: Pulse Test: PW≦300s, Duty Cycle≦2%.
MIN TYP MAX UNIT
60
V
70
V
0.7 mA
1.0
5.0 mA
5.0 mA
20
70
5
1.1
3.0
V
1.5
V
2.87
A
2.5
MHz
15
120
10
kHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R205-004.E
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