NTE320 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza

componentes Descripción

Fabricante

NTE320

Silicon NPN RF Power Transistor 40W @ 175MHz

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics

V(BR)CEO IC = 100mA, IB = 0

V(BR)CES IC = 20mA, VBE = 0

V(BR)EBO IE = 10mA, IC = 0

ICES VCE = 15V, VBE = 0, TC = +55°C

ICBO VCB = 15V, IE = 0

18 –

–

V

36 –

–

V

4

–

–

V

–

– 10 mA

–

– 2.5 mA

DC Current Gain

Dynamic Characteristics

hFE IC = 1A, VCE = 5V

5

–

–

Output Capacitance

Function Test

Cob VCB = 15V, IE = 0, f = 0.1MHz

– 170 200 pF

Common–Emitter Amplifier Power Gain GPE PO = 40W, VCC = 12.5V, f = 175MHz 4.5 –

Collector Efficiency

η

PO = 40W, VCC = 12.5V, f = 175MHz 70

–

– dB

–%

175MHz Test Circuit

RF

Input

+

100µF

0.1µF

1000pF

SHIELD

C1

L1

DUT

C2

RFC

100pF

RFC

L2

+12.5Vdc

C4

RF

Output

100pF

C3

C1, C2, C3, C4 5.0 – 80pF ARCO 462

L1 Straight Wire, #14 AWG, 1–3/8” Long

L2 1 Turn, #14 AWG, 3/8” ID, Length Plus Leads = 1.000

RFC VK200–20/4B, FERROXCUBE

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