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NTE75

Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount)

NTE Electronics 

NTE75

Silicon NPN Transistor

High Power Amplifier, Switch

(Stud Mount)

Description:

The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique

combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for

power supply, pulse amplifier, and similar high efficiency power switching applications.

Features:

D Fast Switching: tr, tf = 300ns (Max)

D Low Saturation Voltage: 250mV max @ 1A

Absolute Maximum Ratings:

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V

DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A

Power Dissipation, PD

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W

Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector–Emitter Cutoff Current

Collector–Base Cutoff Current

Emitter–Base Cutoff Current

V(BR)CBO IC = 10µA

V(BR)CEO IC = 100mA, Note 1

V(BR)EBO IE = 10µA

ICEO VCE = 60V

ICEX VCE = 110V, VEB = 500mV

ICBO VCB = 80V

IEBO VEB = 6V

Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

110 –

–

V

80 –

–

V

8

–

–

V

–

– 100 µA

–

– 10 µA

–

– 0.4 µA

–

– 0.4 µA

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