NTE2521 Ver la hoja de datos (PDF) - NTE Electronics

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NTE2521

Silicon NPN Transistor Video Output for HDTV

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

VCE(sat) IC = 50mA, IB = 5mA

VBE(sat) IC = 50mA, IB = 5mA

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 100µA, IC = 0

– – 1.0 V

– – 1.0 V

250 – – V

250 – – V

3––V

.315 (8.0)

.118 (3.0)

Dia

.295

(7.5)

EC B

.433

(11.0)

.610

(15.5)

.130

(3.3)

.094 (2.4)

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