GS563 Ver la hoja de datos (PDF) - Gennum -> Semtech
Número de pieza
componentes Descripción
Fabricante
GS563 Datasheet PDF : 4 Pages
| |||
ABSOLUTE MAXIMUM RATINGS
PARAMETER
VALUE / UNITS
Supply Voltage
5V DC
Power Dissipation
25 mW
Operating Temperature
-10o to +40oC
Storage Temperature
-20o to +70oC
CAUTION
CLASS 1 ESD SENSITIVITY
PIN CONNECTIONS
4
IN
GND
1
5
OUT
VCC
8
ELECTRICAL CHARACTERISTICS Stage = 1.3V Temperature = 25o C
PARAMETER
SYMBOL
CONDITIONS
Amplifier Current
Bias Voltage (Pin 3)
Bias Current (Pin 3)
Output Voltage
Swing - High (Pin 3)
IAMP
VQ3
IBIAS
VOH
See Note 1
S1 = c, S2 = b, S3 = b
See Note 2
Output Voltage
VOL
Swing - Low (Pin 3)
S1 = b, S2 = b, S3 = c
See Note 3
MIN
30
475
-50
200
200
TYP
MAX
UNITS
54
80
µA
550
675
mV
0
50
nA
590
-
mV
258
-
mV
Open Loop Gain
Input Referred Noise
AOL
I.R.N.
S1 = d, S2 = c, See Note 4
Aweight S1 = d, S2 = c
45
55
-
dB
-
1.0
2.5
µV
Distortion
Supply Rejection
THD
S1 = d, S2 = c, VOUT<100 mVRMS
-
PSRR
Open Loop
6
0.64
1.0
%
11
-
dB
All switch positions remain as shown in Test Schematic unless otherwise stated. V is the actual voltage measured on the pin at given condition.
P
V - quiescent (unbias) voltage measured on the pad (nothing connected to the pin)
Q
Note: 1. IBIAS = (VP3 [S2 = b] - VQ3) /1M
2. VOH = VP6 - VQ6
3. VOL = VQ6 - VP6
4. AOL = 20 log (1 + RF / RS) - (20 log ( (RF / RS) (1 / (1 + R1 / R2) ) (VIN / VOUT) - 1) )
VCC
1µF
A
1.3V
R1
1k
VIN
R2
10
180mVRMS
at 1kHz
C1
RS
d
1.0
3k92 c S1
b
1µA
a
+
0.4V
DC
680pF
All resistors in ohms, all capacitors
in farads unless otherwise stated.
520 - 67 - 01
7 GS563
3
6
2
a
b RF = 1M
S2
c RF = 392k
Fig. 1 GS563 Test Circuit
2
S3
a bc
VOUT
10µA
V
10µA
Share Link: 