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MMBF2201PT1

Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

Motorola => Freescale 

MMBF2202PT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V(BR)DSS

20

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(1)

IGSS

—

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 200 mAdc)

(VGS = 4.5 Vdc, ID = 50 mAdc)

rDS(on)

—

—

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)

gFS

—

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

(VDS = 5.0 V)

(VDS = 5.0 V)

Ciss

—

Coss

—

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDG = 5.0 V)

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = –15 Vdc,

RL = 75 Ω, ID = 200 mAdc,

VGEN = –10 V, RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge (See Figure 5)

(VDS = 16 V, VGS = 10 V,

ID = 200 mA)

QT

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

IS

—

Pulsed Current

ISM

—

Forward Voltage(2)

VSD

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

TYPICAL CHARACTERISTICS

Typ

Max

Unit

—

—

Vdc

µAdc

—

1.0

—

10

—

±100

nAdc

1.7

2.4

Vdc

Ohms

1.5

2.2

2.0

3.5

600

—

mMhos

50

—

pF

45

—

20

—

2.5

—

ns

1.0

—

16

—

8.0

—

2700

—

pC

—

0.3

A

—

0.75

1.5

—

V

10

4.0

8

ID = 200 mA

3.5

VGS = 4.5 V

3.0

ID = 50 mA

6

2.5

2.0

4

1.5

VGS = 10 V

ID = 200 mA

1.0

2

0.5

0

01

234 56 78

VGS, GATE–SOURCE VOLTAGE (VOLTS)

9 10

Figure 1. On Resistance versus Gate–Source Voltage

0

– 40 – 20 0 20 40 60 80 100 120 140 160

TEMPERATURE (°C)

Figure 2. On Resistance versus Temperature

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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