QSB363(2001) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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QSB363 Datasheet PDF : 5 Pages
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SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
VEC
PD
Rating
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 µs, T = 10 ms.
5. D = 940 nm, GaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
Peak Sensitivity Wavelength
Reception Angle
DPS
—
0
—
Dark Current
VCE = 10 V, Ee = 0
ID
—
Collector-Emitter Breakdown
IC = 1 mA
BVCEO
30
Emitter-Collector Breakdown
IE = 100 µA
BVECO
4
On-State Collector Current
Ee = 0.5 mW/cm2
IC(on)
0.7
VCE = 5 V(5)
Saturation Voltage
Ee = 0.5 mW/cm2
VCE (SAT)
—
IC = 0.1 mA(5)
Rise Time
Fall Time
VCC = 5 V, RL = 100 1
tr
—
IC = 0.2 mA
tf
—
TYP.
MAX.
880
—
±12
—
—
100
—
—
—
—
—
—
—
0.4
5
—
5
—
UNITS
nm
Deg.
nA
V
V
mA
V
µs
µs
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