TP120N Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TP120N Datasheet PDF : 9 Pages
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Characteristics
TPI
1
Characteristics
Table 1.
Symbol
Absolute ratings (Tamb = 25 °C)
Parameter
Value Unit
IPP Peak pulse current (see note (1))
10/1000 µs
30
5/310 µs
40
A
2/10 µs
90
ITSM
Non repetitive surge peak on-state current (F = 50 Hz)
tp = 10 ms
t = 1s
8
3.5
A
Tstg Storage temperature range
Tj Maximum junction temperature
- 55 to 150
150
°C
TL Maximum lead temperature for soldering during 10 s.
260
°C
1. See Figure 3.
Table 2.
Symbol
Thermal resistances
Parameter
Value
Unit
Rth(j-a) Junction to ambient
170
°C/W
Table 3.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VF Forward voltage drop
C Capacitance
IRM @ VRM
VBR @ IR
VBO
VBO
dyn.
IBO
Order code
TPI8011N
TPI12011N
max.
min.
max. typ. max.
note (1) note (2) note (1)
µA
V
V
mA
V
V
mA
10
70
80
1
110
120
800
10
105
120
1
160
170
800
1. See the reference test circuit 1 (Figure 5.)
2. Surge test according to CCITT 1.5 kV, 10/700 µs between Tip or Ring and ground
3. See functional holding current test circuit 2 (Figure 6.)
IH
min.
note(3)
mA
150
150
Figure 2.
2/9
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