HFA3046B(1998) Ver la hoja de datos (PDF) - Intersil
Número de pieza
componentes Descripción
Fabricante
HFA3046B Datasheet PDF : 9 Pages
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HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . .
18.5mA
34mA
at
at
TJ
TJ
=
=
150oC
125oC
37mA at TJ = 110oC
Peak Collector Current (Any Condition) . . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
120
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
115
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC
DIE
SOIC
PARAMETER
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX UNITS
DC NPN CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V(BR)CBO
Collector-to-Emitter Breakdown
Voltage, V(BR)CEO
Collector-to-Emitter Breakdown
Voltage, V(BR)CES
Emitter-to-Base Breakdown
Voltage, V(BR)EBO
Collector-Cutoff-Current, ICEO
Collector-Cutoff-Current, ICBO
Collector-to-Emitter Saturation
Voltage, VCE(SAT)
Base-to-Emitter Voltage, VBE
DC Forward-Current Transfer
Ratio, hFE
Early Voltage, VA
Base-to-Emitter Voltage Drift
Collector-to-Collector Leakage
IC = 100µA, IE = 0
IC = 100µA, IB = 0
IC = 100µA, Base Shorted to Emitter
IE = 10µA, IC = 0
VCE = 6V, IB = 0
VCB = 8V, IE = 0
IC = 10mA, IB = 1mA
IC = 10mA
IC = 10mA
VCE = 2V
IC = 1mA, VCE = 3.5V
IC = 10mA
12
18
-
12
18
-
V
8
12
-
8
12
-
V
10
20
-
10
20
-
V
5.5
6
-
5.5
6
-
V
-
2
100
-
2
100
nA
-
0.1
10
-
0.1
10
nA
-
0.3
0.5
-
0.3
0.5
V
-
0.85 0.95
-
0.85 0.95
V
40
130
-
40
130
-
20
50
-
-
-1.5
-
-
1
-
20
50
-
-1.5
-
1
-
V
-
mV/oC
-
pA
Electrical Specifications TA = 25oC
PARAMETER
TEST CONDITIONS
DYNAMIC NPN CHARACTERISTICS
Noise Figure
fT Current Gain-Bandwidth
Product
Power Gain-Bandwidth Product,
fMAX
f = 1.0GHz, VCE = 5V,
IC = 5mA, ZS = 50Ω
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 10mA, VCE = 5V
DIE
SOIC
MIN TYP MAX MIN TYP MAX UNITS
-
3.5
-
-
5.5
-
-
8
-
-
6
-
-
3.5
-
dB
-
5.5
-
GHz
-
8
-
GHz
-
2.5
-
GHz
3-448
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