TMG40C60J
Gate Characteristics
10
VGM(10V)
PGM(10W)
PG(AV() 1W)
1
Tj=25℃
1+
GT1
1−
GT1
1−
GT3
0.1
10
VG(D 0.2V)
100
1000
Gate Curren(t mA)
10000
R.M.S. On-State Current vs
Maximum Power Dissipation
50
45
40
θ
π
0
2π
θ
35
360゜
θ:Conduction Angle
30
25
θ=180゜
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45
R.M.S. On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
500
400
300
200
100
60HZ
50HZ
0
1
10
100
Time(Cycles)
IGT −T(j Typical)
1000
On-State Characteristics
1000
Tj=25℃
Tj=125℃
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage(V)
R.M.S. On-State vs
Allowable Case Temperature
130
120
110
100
90
80
70
θ
π
0
2π
θ
360゜
θ:Conduction Angle
60
0 5 10 15 20 25 30 35
R.M.S. On-State Curren(t A)
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
40 45
Transient Thermal Impedance
10.0
1.0
0.1
0.01
0.1
1
10
Time(Sec.)
VGT −T(j Typical)
1000
100
I+GT1(!+)
I−GT1(!−)
10
−50 −25
I−GT3(#−)
0 25 50 75 100 125
Junction Temp.(℃)
100
V+GT(1 !+)
V−GT(1 !−)
V−GT(3 #−)
10
−50 −25
0 25 50 75 100 125
Junction Temp.(℃)