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Número de pieza
componentes Descripción
2SK3212 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK3212
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
2SK3212 Datasheet PDF : 9 Pages
1
2
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4
5
6
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8
9
2SK3212
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
10 V
4
V
GS
= 0, –5 V
5V
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Maximun Avalanche Energy vs.
Channel Temperature Derating
10
I
AP
= 10 A
8
V
DD
= 50 V
duty < 0.1 %
Rg > 50
Ω
6
4
2
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
Avalanche Waveform
V
DS
Monitor
Rg
50
Ω
L
I
AP
Monitor
D. U. T
V
DD
E
AR
=
1
2
• L • I
AP
2
•
V
DSS
V
DSS
– V
DD
I
AP
I
D
V
(BR)DSS
V
DS
V
DD
0
6
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