BD8158FVM(2010) Ver la hoja de datos (PDF) - ROHM Semiconductor

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Fabricante

BD8158FVM
(Rev.:2010)

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

ROHM Semiconductor 

BD8152FVM, BD8158FVM

Technical Note

Electrical Characteristics BD8152FVM (Unless otherwise specified, Ta = 25℃; Vcc = 3.3 V; ENB = 3.3 V)

Parameter

Symbol

Min.

Limit

Typ.

Max.

Unit

Conditions

[triangular waveform oscillator]

Oscillating frequency 1

FOSC1

540

600

660

kHz FCLK = 0 V

Oscillating frequency 2

FOSC2

1.08

1.20

1.32

MHz FCLK = Vcc

[Overcurrent protection circuit]

Overcurrent limit

ISW

-

2

-

A

[Soft start circuit]

SS source current

ISO

6

10

14

µA Vss = 0.5 V

[Under-voltage lockout protection circuit]

Off threshold voltage

VUTOFF

2.1

2.2

2.3

V

On threshold voltage

VUTON

2.0

2.1

2.2

V

[Error amp]

Input bias current

IB

-

0.1

0.5

µA

Feedback voltage

VFB

1.232

1.245

1.258

V

Buffer

[Output]

ON resistance

RON

-

250

380

mΩ *Isw = 1 A

Max. duty ratio

DMAX

72

80

88

%

RL = 100 Ω

[ENB]

ENB on voltage

VON

Vcc0.7 Vcc

-

V

ENB off voltage

VOFF

-

0

Vcc0.3

V

[Overall]

Standby current

ISTB

-

0

10

µA VENB = 0 V

Average consumption current

ICC

-

1.2

2.4

mA no switching

 This product is not designed for protection against radio active rays.

* Design guarantee (No total shipment inspection is made.)

Electrical Characteristics BD8158FVM (Unless otherwise specified, Ta = 25℃; Vcc = 2.5 V; ENB = 2.5 V)

Parameter

Symbol

Min.

Limit

Typ.

Max.

Unit

Conditions

[triangular waveform oscillator]

Oscillating frequency 1

FOSC1

480

600

720

kHz FCLK = 0 V

Oscillating frequency 2

FOSC2

0.96

1.20

1.44

MHz FCLK = Vcc

[Overcurrent protection circuit]

Overcurrent limit

ISW

-

2

-

A

[Soft start circuit]

SS source current

ISO

6

10

14

µA Vss = 0.5 V

[Under-voltage lockout protection circuit]

Off threshold voltage

VUTOFF

1.7

1.8

1.9

V

On threshold voltage

VUTON

1.6

1.7

1.8

V

[Error amp]

Input bias current

IB

-

0.1

0.5

µA

Feedback voltage

VFB

1.232

1.245

1.258

V

Buffer

[Output]

ON resistance

RON

-

250

-

mΩ *Isw = 1 A

Max. duty ratio

[ENB]

DMAX

-

85

-

%

RL = 100 Ω

ENB on voltage

VON

Vcc0.7 Vcc

-

V

ENB off voltage

VOFF

-

0

Vcc0.3

V

[Overall]

Standby current

ISTB

-

0

10

µA VENB = 0 V

Average consumption current

ICC

-

1.2

2.4

mA no switching

 This product is not designed for protection against radio active rays.

* Design guarantee (No total shipment inspection is made.)

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© 2010 ROHM Co., Ltd. All rights reserved.

2/17

2010.03 - Rev.B

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