IW4050BN Ver la hoja de datos (PDF) - IK Semicon Co., Ltd
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IW4050BN Datasheet PDF : 5 Pages
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IW4050B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIN
PD
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
-0.5 to +20
V
VCC** to +18
V
-0.5 to VCC +0.5
V
±10
mA
750
mW
500
PD Power Dissipation per Output Transistor
Tstg Storage Temperature
100
mW
-65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
** The IW4050B has high-to-low level voltage conversion capability but not low-to-high level; therefore it is
recommended that VIN ≥ VCC
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
3.0
18
V
VCC**
18
V
VOUT
DC Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
-55
+125
°C
** The IW4050B has high-to-low level voltage conversion capability but not low-to-high level; therefore it is
recommended that VIN ≥ VCC
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
Rev. 00
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