K1109-J36-AE3-R Ver la hoja de datos (PDF) - Unisonic Technologies

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K1109-J36-AE3-R

N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

Unisonic Technologies 

K1109

N-CHANNEL JFET

„ ABSOLUTE MAXIMUM RATINGS (unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSX

20

V

Gate-Drain Voltage

VGDO

-20

V

Drain Current

ID

10

mA

Gate Current

IG

10

mA

Total Power Dissipation

PD

80

mW

Junction Temperature

TJ

+125

°C

Storage Temperature

TSTG

-55 ~ +125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

Drain Current

Gate Off Voltage

Forward Transfer Admittance

Input Capacitance

Noise Voltage

„ CLASSIFICATION OF IDSS

RANK

RANGE

J32

40-70

SYMBOL

IDSS

VGS(OFF)

lYFSl

CISS

NV

TEST CONDITIONS

VDS=5.0V, VGS=0

VDS=5.0V, ID=1.0μA

VDS=5.0V, VGS=0, f=1kHz

VDS=5.0V, VGS=0, f=1.0MHz

MIN TYP MAX UNIT

40

600 μA

-0.1

-1.0 V

600 1600

μS

7.0 8.0 pF

1.8 3.0 V

J33

60-110

J34

90-180

J35

150-300

J36

200-450

J37

300-600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-009.Ga

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