MRA100014L Ver la hoja de datos (PDF) - Motorola => Freescale
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MRA100014L Datasheet PDF : 2 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
• Designed for Class A Linear Power Amplifiers
• Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 14 Watts
Power Gain — 8.0 dB, Small–Signal
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRA1000–14L/D
MRA1000-14L
8.0 dB, TO 1000 MHz
14 WATTS BROADBAND
UHF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0)
Collector Cutoff Current (VCB = 19 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 5.0 V)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 145D–02, STYLE 1
(.380 SOE)
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
RθJC
Value
28
50
3.5
83
0.48
200
– 65 to +150
Max
2.1
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Symbol
Min
Typ
Max
Unit
V(BR)CEO
28
—
V(BR)CES
50
—
V(BR)CBO
50
—
V(BR)EBO
3.5
—
ICBO
—
—
—
Vdc
—
Vdc
—
Vdc
—
Vdc
20
mAdc
hFE
20
—
90
—
(continued)
MRA1000–14L
1
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