MUN52XXDW1T1 Ver la hoja de datos (PDF) - ON Semiconductor

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Fabricante

MUN52XXDW1T1

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors

ON Semiconductor 

MUN5211DW1T1 Series

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 4.)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

MUN5211DW1T1

MUN5212DW1T1

MUN5213DW1T1

MUN5214DW1T1

MUN5215DW1T1

MUN5216DW1T1

MUN5230DW1T1

MUN5231DW1T1

MUN5232DW1T1

MUN5233DW1T1

MUN5234DW1T1

MUN5235DW1T1

MUN5236DW1T1

MUN5237DW1T1

hFE

35

60

−

60

100

−

80

140

−

80

140

−

160

350

−

160

350

−

3.0

5.0

−

8.0

15

−

15

30

−

80

200

−

80

150

−

80

140

−

80

150

−

80

140

−

Collector-Emitter Saturation Voltage

VCE(sat)

−

(IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1

(IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1

MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1

−

0.25

Vdc

Output Voltage (on)

VOL

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

MUN5211DW1T1

−

MUN5212DW1T1

−

MUN5214DW1T1

−

MUN5215DW1T1

−

MUN5216DW1T1

−

MUN5230DW1T1

−

MUN5231DW1T1

−

MUN5232DW1T1

−

MUN5233DW1T1

−

MUN5234DW1T1

−

MUN5235DW1T1

−

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

MUN5213DW1T1

−

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ)

MUN5236DW1T1

−

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ)

MUN5237DW1T1

−

Vdc

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

−

0.2

Output Voltage (off)

VOH

4.9

−

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5230DW1T1

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5215DW1T1

MUN5216DW1T1

MUN5233DW1T1

−

Vdc

4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

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