NIF62514
Self-Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• Low RDS(on)
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• This is a Pb−Free Device
© Semiconductor Components Industries, LLC, 2009
1
April, 2009 − Rev. 7
http://onsemi.com
6.0 AMPERES*
40 VOLTS CLAMPED
RDS(on) = 90 mW
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MARKING
DIAGRAM
DRAIN
4 SOT−223
4
AYW
123
CASE 318E
STYLE 3
1
62514G
G
23
GATE
SOURCE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
62514 = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NIF62514T1G
SOT−223 1000/Tape & Reel
(Pb−Free)
NIF62514T3G
SOT−223 4000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Limited by the current limit circuit.
Publication Order Number:
NIF62514/D