NID6002N Ver la hoja de datos (PDF) - ON Semiconductor
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NID6002N Datasheet PDF : 6 Pages
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NID6002N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 V, ID = 2 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 52 V, VGS = 0 V)
IDSS
Gate Input Current
(VGS = 5.0 V, VDS = 0 V)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 150 mA)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 V, ID = 2.0 A, TJ @ 25°C)
RDS(on)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 25°C)
(VGS = 5.0 V, ID = 2.0 A, TJ @ 150°C)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
RDS(on)
VSD
SWITCHING CHARACTERISTICS
Turn−on Delay Time
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% Vin to 10% ID
td(on)
Turn−on Rise Time
Turn−off Delay Time
Turn−off Fall Time
Slew Rate ON
Slew Rate OFF
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 10% ID to 90% ID
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% Vin to 90% ID
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 90% ID to 10% ID
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 70% to 50% VDD
RL = 6.6 W, Vin = 0 to 10 V,
VDD = 13.8 V, ID = 2.0 A, 50% to 70% VDD
trise
td(off)
tfall
dVDS/dTon
dVDS/dToff
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C (Note 6)
ILIM
VDS = 10 V, VGS = 5.0 V, TJ = 130°C (Note 6)
VDS = 10 V, VGS = 10 V, TJ = 25°C (Note 6)
Temperature Limit (Turn−off)
VGS = 5.0 V
TLIM(off)
Thermal Hysteresis
VGS = 5.0 V
DTLIM(on)
Temperature Limit (Turn−off)
VGS = 10 V
TLIM(off)
Thermal Hysteresis
VGS = 10 V
DTLIM(on)
Input Current during
Thermal Fault
VDS = 0 V, VGS = 5.0 V, TJ = TJ > T(fault)
VDS = 0 V, VGS = 10 V, TJ = TJ > T(fault)
Ig(fault)
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Current limit measured at 380 ms after gate pulse.
Min
60
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
4.0
4.0
−
150
−
150
−
5.5
12
8000
400
Typ
65
27
45
1.85
5.0
185
210
445
0.9
103
246
742
707
73
35
6.4
5.5
7.9
180
10
180
20
5.2
11
−
−
Max Unit
70
V
mA
100
mA
200
2.4
V
− −mV/°C
mW
210
mW
240
520
V
1.1
120
ns
285
ns
850
ns
780
ns
−
V/ms
−
V/ms
11
A
11
−
200
°C
−
°C
200
°C
−
°C
−
mA
V
−
−
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