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PMP5201G Datasheet PDF : 15 Pages
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NXP Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes
Type number
PMP5201V
PMP5201G
PMP5201Y
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
EC
R5*
S9*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
[1][2] -
SOT353
[1] -
SOT363
[1] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT666
[1][2] -
SOT353
[1] -
SOT363
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
−50
V
−45
V
−5
V
−100 mA
−200 mA
200
mW
200
mW
200
mW
300
mW
300
mW
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PMP5201V_G_Y_3
Product data sheet
Rev. 03 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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