ST183S08PFK0PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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ST183S08PFK0PBF Datasheet PDF : 9 Pages
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ST183SPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Stud Version), 195 A
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ITM
180° el
570
370
560
360
500
300
340
190
50
VDRM
50
60
85
47 /0.22
ITM
180° el
900
610
940
630
925
610
760
490
50
VDRM
-
60
85
47/0.22
ITM
100 µs
7040
5220
3200
2280
1780
1200
880
560
50
VDRM
-
60
85
47/0.22
UNITS
A
V
A/µs
°C
Ω/µF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
IT(AV)
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I2√t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 74 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
VALUES
195
85
306
4900
5130
4120
4310
120
110
85
78
1200
1.80
1.40
1.45
0.67
0.58
600
1000
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
mA
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Document Number: 94369
Revision: 30-Apr-08
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