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SUM60N06-15

N-Channel 60-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUM60N06-15

Vishay Siliconix

N-Channel 60-V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (Ω)

60

0.015 at VGS = 10 V

ID (A)

60a

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

APPLICATIONS

• Industrial

Available

RoHS*

COMPLIANT

D

TO-263

G

G DS

Top View

Ordering Information: SUM60N06-15

SUM60N06-15-E3 (Lead (Pb)-free)

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

60

V

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

Pulsed Drain Current

TC = 25 °C

TC = 125 °C

ID

60

35

A

IDM

100

Avalanche Current

IAR

35

Repetitive Avalanche Energya

L = 0.1 mH

EAR

61

mJ

Maximum Power Dissipationa

TC = 25 °C

100b

TA = 25 °Cc

PD

3.75

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR-4 material).

PCB Mountc

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72080

S-80273-Rev. C, 11-Feb-08

Symbol

RthJA

RthJC

Limit

40

1.4

Unit

°C/W

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