TK6P60W Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

TK6P60W

MOSFETs Silicon N-Channel MOS (DTMOS)

Unspecified 

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 57.6 mH, RG = 25 Ω, IAR = 1.6 A

Symbol

Rth(ch-c)

Max

Unit

2.09

/W

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2/9

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