BR211-140 Ver la hoja de datos (PDF) - Philips Electronics

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BR211-140

Breakover diodes

Philips Electronics 

Philips Semiconductors

Breakover diodes

Product specification

BR211 series

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

dVD/dt

Cj

Linear rate of rise of off-state

voltage that will not trigger any

device

Off-state capacitance

CONDITIONS

V(DM) = 85% V(BR)min; Tj = 70 ˚C

VD = 0 V; f = 1 kHz to 1 MHz

MIN. TYP. MAX. UNIT

-

- 2000 V/µs

-

- 100 pF

current VT

IT

IH

ID

V(BR)

I(BR)

IS

V(BO)

VD voltage

20 ITSM / A

15

10

5

BR211

I

ITSM2

time

Symbol

Symmetric BOD

Fig.1. Definition of breakover diode characteristics.

01

10

100

1000

10000

Number of impulses

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; Tj = 70˚C

prior to surge.

current

100%

90%

ITSM

50%

30%

0

time

10us

700us

Fig.2. Test waveform for high voltage impulse (ITSM1)

according to CCITT vol IX-Rec K17.

V(BR)(Tj)

1.06 V(BR)(25 C)

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

-40 -20 0 20 40 60 80 100

Tj / C

Fig.4. Normalised avalanche breakdown voltage V(BR)

and V(BO) as a function of temperature.

August 1996

3

Rev 1.200

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