2STR2215 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
2STR2215 Datasheet PDF : 10 Pages
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Electrical characteristics
2
Electrical characteristics
2STR2215
(Tcase = 25 °C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -15 V
-0.1 µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -4 V
-0.1 µA
Collector-base
V(BR)CBO breakdown voltage
IC = -100 µA
-15
V
(IE = 0)
V(BR)CEO (1)
Collector-emitter
breakdown voltage
IC = -10 mA
-15
V
(IB = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100 µA
-5
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = -100 mA IB = -1 mA
IC = -1 A
IB = -100 mA
IC = -2 A
IB = -200 mA
-0.15 V
-0.25 -0.50 V
-0.40 -0.85 V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = -1 A
IB = -100 mA
-0.90 -1.25 V
hFE (1) DC current gain
IC = -50 mA VCE = -2 V 200
IC = -500 mA VCE = -2 V 200 280 560
IC = -1 A
VCE = -2 V 130
IC = -2 A
VCE = -2 V 80
CCBO
Collector-base
capacitance (IE = 0)
VCB = -10 V
f = 1 MHz
20
pF
Resistive load
ton
Turn-on time
toff
Turn-off time
IC = -1.5 A VCC = -10 V
60
ns
IB1 = -IB2 = -150 mA
220
ns
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
4/10
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