MITSUBISHI LSIs
M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM
TIMING REQUIREMENTS
(Ta = 0 ~ 70°C, VCC = 5V ± 10%, VSS = 0V, unless otherwise noted, see notes 12, 13)
Limits
Symbol
Parameter
M5M417400C-5S
M5M417400C-6S
M5M417400C-7S
Unit
Min
Max
Min
Max
Min
Max
tRASS
Self Refresh RAS low pulse width
100
100
100
µs
tRPS
Self Refresh RAS high precharge time
90
110
130
ns
tCHS
Self Refresh RAS hold time
-50
-50
-50
ns
tRSR
Read setup time before RAS low
10
10
10
ns
tRHR
Read hold time after RAS low
10
10
15
ns
SELF REFRESH ENTRY & EXIT CONDITIONS
1. In case of distributed refresh
The last / first full refresh cycles (2K) must be made within tNS / tSN before / after self refresh, on the condition
of tNS ≤ 32ms and tSN ≤ 32ms.
2. In case of burst refresh
The last / first full refresh cycles (2K) must be made within tNS / tSN before / after self refresh, on the condition
of tNS + tSN ≤ 32ms.
8