74LVC1G00 Ver la hoja de datos (PDF) - Diodes Incorporated.
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74LVC1G00 Datasheet PDF : 11 Pages
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74LVC1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Vcc
IOH = -100μA
1.65 V to 5.5V
IOH = -4mA
1.65 V
VOH
High Level Output
Voltage
IOH = -8mA
IOH = -16mA
IOH = -24mA
2.3V
3V
IOH = -32mA
4.5 V
IOL = 100μA
1.65 V to 5.5V
IOL = 4mA
1.65 V
VOL
High-level Input Voltage IOL = 8mA
IOL = 16mA
IOL = 24mA
2.3V
3V
IOL = 32mA
4.5
II Input Current
VI = 5.5 V or GND 0 to 5.5 V
IOFF
Power Down Leakage
Current
VI or VO = 5.5V
0
ICC Supply Current
VI = 5.5V of GND
IO=0
1.65 V to 5.5V
ΔICC
Additional Supply
Current
One input at VCC – 3 V to 5.5V
0.6 V Other inputs
at VCC or GND
Ci Input Capacitance
Vi = VCC – or GND 3.3
θJA
Thermal Resistance
Junction-to-Ambient
SOT25
SOT353
(Note 4)
(Note 4)
θJC
Thermal Resistance
Junction-to-Case
SOT25
SOT353
(Note 4)
(Note 4)
Min
VCC – 0.1
1.2
1.9
2.4
2.3
3.8
Typ.
3.5
204
371
52
143
Max Unit
V
0.1
0.45
0.3
V
0.4
0.55
0.55
± 5 μA
± 10 μA
10 μA
500 μA
pF
oC/W
oC/W
oC/W
oC/W
Notes: 4. Test condition for SOT25 and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended
pad layout.
74LVC1G00
Document number: DS32196 Rev. 1 - 2
5 of 11
www.diodes.com
May 2010
© Diodes Incorporated
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