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Número de pieza
componentes Descripción
BUZ102SE3045A Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BUZ102SE3045A
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
Infineon Technologies
BUZ102SE3045A Datasheet PDF : 8 Pages
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8
BUZ 102S
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 52 A,
V
DD
= 25 V
R
GS
= 25
Ω
260
mJ
220
200
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 140
˚
C
180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 52 A
BUZ102S
16
V
12
10
0,2
V
DS max
0,8
V
DS max
8
6
4
2
0
0 10 20 30 40 50
nC
70
Q
Gate
BUZ102S
66
V
64
62
60
58
56
54
52
50
-60 -20
20
60 100 140
˚
C
200
T
j
Data Book
8
05.99
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