OH10003
GaAs Hall Devices
PD Ta
200
180
160
140
120
VH Ta
RIN Ta
240
1 600
B = 1 kG
IC = 6 mA
1 400
B=0
IC = 1 mA
200
1 200
160
1 000
100
120
800
80
600
60
80
400
40
40
20
200
0
/ 0 20 40 60 80 100 120 140 160
0
−40 0
40 80 120
0
−40 0
40 80 120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
nce d ge. edtype) 1600
ta u VC = 6 V
le s ntin 1 400 Ta = 25°C
VH B
a e cyc isco 1200
n u t life ed, d 1000
duc typ 800
te tin urProtinued 600
g fo con 400
win dis 200
in n sfollo laned 0
e p 0 0.2 0.4 0.6 0.8 1.0 1.2
a o lud e, Magnetic flux density B (T)
VH IC
320
B = 1 kG
280
Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control current IC (mA)
VH VC
320
B = 1 kG
Ta = 25°C
280
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control voltage VC (V)
M isce/Discoen,timnuaeindteinncance typ I Typical Drive Circuit
Dtenanc ce typ +9 V
Maminaintenan 4
ned3 1
(pla 2
+9 V
−
+
−9 V
−9 V
−V
+V
688