SI7232DN-T1-GE3 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
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Fabricante
SI7232DN-T1-GE3 Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
20
Si7232DN
Vishay Siliconix
VGS = 5 V thru 2 V
30
VGS = 1.5 V
20
10
0
0.0
VGS = 1 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.035
0.030
0.025
0.020
VGS = 1.8 V
VGS = 2.5 V
0.015
0.010
0
VGS = 4.5 V
10
20
30
40
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 10 A
6
VDS = 10 V
4
VDS = 16 V
2
16
12
8
4
0
0.0
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
1400
Ciss
1200
1000
800
600
400
Coss
200
0 Crss
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 10 A
1.4
VGS = 1.8 V, 2.5 V, 4.5 V
1.2
1.0
0.8
0
0
3
6
9
12 15 18 21
Qg - Total Gate Charge (nC)
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-0931-Rev. C, 27-Apr-15
3
Document Number: 68986
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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