SI7232DN Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI7232DN Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
0.04
ID = 10 A
Si7232DN
Vishay Siliconix
0.03
10
TJ = 150 °C
TJ = 25 °C
0.02
0.01
TJ = 125 °C
TJ = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
50
0.8
40
0.7
ID = 250 µA
30
0.6
0.5
20
0.4
10
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
IDM Limited
100 µs
ID(on)
1
Limited
0.1
TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
10 s, 1 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0931-Rev. C, 27-Apr-15
4
Document Number: 68986
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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