BDY53 Ver la hoja de datos (PDF) - Comset Semiconductors
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componentes Descripción
Fabricante
BDY53 Datasheet PDF : 3 Pages
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NPN BDY53 – BDY54
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA, IB=0
BDY53 60 -
BDY54 120 -
-
-
V
IEBO
Emitter-Base Cutoff
Current
VEB=7 V
BDY53
BDY54
-
- 3.0 mA
VCE=100 V
ICEX
Collector-Emitter Cutoff
Current
VBE=-1.5 V
TCASE=150°C
VCE=150 V
VBE=-1.5 V
TCASE=150°C
BDY53 -
BDY54 -
-
15 mA
-
BDY53
VCE(SAT)
Collector-Emitter saturation IC=4.0 A, IB=0.4 A
Voltage (*)
IC=7.0 A, IB=1.4 A
BDY54
BDY53
BDY54
-
-
- 1.1
V
- 2.2
VBE(SAT) Base-Emitter Voltage (*)
IC=4.0 A, IB=0.4 A
IC=7.0 A, IB=1.4 A
BDY53
BDY54
BDY53
BDY54
-
-
-
2
V
- 2.5
h21E
Static Forward Current
transfer ratio (*)
VCE=1.5 V, IC=2 A
BDY53
BDY54
20
-
60
V
fT
Transition Frequency
VCE=4.0 V, IC=0.5 A BDY53
f=10 MHz
BDY54
20
-
- MHz
td + tr
Turn-on time
IC=5 A, IB=1 A
BDY53
BDY54
-
0.3
-
µs
ts + tf
Turn-off time
IC=5 A
IB1=1 A
IB2=-0.5 A
BDY53
- 1.8 - µs
BDY54
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
08/11/2012
COMSET SEMICONDUCTORS
2|3
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