AL8807B
Absolute Maximum Ratings
Symbol
ESD HBM
ESD MM
VIN
VSW
VCTRL
ISW-RMS
ISW-PK
TJ
TLEAD
TST
Parameter
Human Body Model ESD Protection
Machine Model ESD Protection
Continuous VIN Pin Voltage Relative to GND
SW Voltage Relative to GND
CTRL Pin Input Voltage
DC or RMS Switch Current
Peak Switch Current (<10%)
Junction Temperature
Lead Temperature Soldering
Storage Temperature Range
MSOP-8EP
Ratings
Unit
2.5
kV
200
V
-0.3 to +40
V
-0.3 to +40
V
-0.3 to +6
V
1.6
A
2.5
A
+150
°C
+300
°C
-65 to +150
°C
Caution:
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
Recommended Operating Conditions
Symbol
VIN
VCTRLH
VCTRLL
fSW
ISW
TJ
Parameter
Operating Input Voltage Relative to GND
Voltage High for PWM Dimming Relative to GND
Voltage Low for PWM Dimming Relative to GND
Maximum Switching Frequency
Continuous Switch Current
Junction Temperature Range
MSOP-8EP
Min
Max
6.0
36
2.5
5.5
0
0.4
—
1
—
1.3
-40
+125
Unit
V
V
V
MHz
A
°C
Electrical Characteristics (VIN = 12V, @TA = +25°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Min
VINSU
Internal Regulator Start Up Threshold VIN rising
—
VINSH Internal Regulator Hysteresis Threshold VIN falling
100
IQ
Quiescent Current
Output not switching (Note 4)
—
IS
Input Supply Current
CTRL pin floating f = 250kHz
—
VTH
Set Current Threshold Voltage
—
95
VTH-H
Set Threshold Hysteresis
—
—
ISET
SET Pin Input Current
VSET = VIN-0.1
—
RCTRL CTRL Pin Input Resistance
Referred to internal reference
—
VREF
Internal Reference Voltage
—
RDS(ON) On Resistance of SW MOSFET
ISW = 1A
—
tR
SW Rise Time
VSENSE = 100 ±20mV fSW = 250kHz
—
tF
SW Fall Time
VSW = 0.1V~12V~0.1V CL = 15pF
—
TOTP
Over-Temperature Shutdown
—
—
TOTP-Hyst Over-Temperature Hysteresis
—
—
ISW_Leakage Switch Leakage Current
VIN =36V
—
θJA
Thermal Resistance Junction-to-
Ambient (Note 5)
(Note 6)
—
θJC
Thermal Resistance Junction-to-case
(Note 7)
(Note 6)
—
Typ
—
—
—
1.8
100
±15
16
50
2.5
0.25
12
20
155
55
—
69
4.3
Max
Unit
5.9
V
300
mV
350
µA
5
mA
105
mV
—
mV
22
µA
—
kΩ
—
V
0.4
Ω
—
ns
—
ns
—
°C
—
°C
0.5
μA
—
°C/W
—
—
Notes:
4. AL8807B does not have a low power standby mode but current consumption is reduced when output switch is inhibited: VSENSE = 0V. Parameter is
tested with VCTRL ≤ 2.5V.
5. Refer to figure 39 for the device derating curve.
6. Test condition for MSOP-8EP: Device mounted on FR-4 PCB (51mm x 51mm 2oz copper, minimum recommended pad layout on top layer and
thermal vias to bottom layer with maximum area ground plane. For better thermal performance, larger copper pad for heat-sink is needed.
7. Dominant conduction path is via exposed pad.
AL88070B
Document number: DS36191 Rev. 1 - 2
3 of 18
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March 2014
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