2SD467C Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SD467C

Silicon NPN Epitaxial / 2SD467

Hitachi -> Renesas Electronics 

2SD467

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

25

V

20

V

5

V

0.7

A

1.0

A

0.5

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 25

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

hFE*1

85

—

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter voltage

VBE

—

0.19

0.76

Gain bandwidth product

fT

—

280

Collector output capacitance Cob

—

12

Note: 1. The 2SD467 is grouped by hFE as follows.

B

C

85 to170

120 to 240

Max

—

—

—

1.0

240

0.5

1.0

—

—

Unit

V

V

V

µA

V

V

MHz

pF

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 1 V, IC = 0.15 A

(Pulse test)

IC = 0.5 A, IB = 0.05 A

(Pulse test)

VCE = 1 V, IC = 0.15 A

(Pulse test)

VCE = 1 V, IC = 0.15 A

(Pulse test)

VCB = 10 V, IE = 0, f = 1 MHz

2

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