1S2074H Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

1S2074H

Silicon Epitaxial Planar Diode for High Speed Switching

Hitachi -> Renesas Electronics 

1S2074(H)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Power dissipation

Junction temperature

Storage temperature

Note: Within 1s forward surge current.

Symbol

V

RM

V

R

IFM

IFSM *

IO

Pd

Tj

Tstg

Value

Unit

50

V

45

V

450

mA

600

mA

150

mA

250

mW

175

°C

−65 to +175

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Condition

Forward voltage

V

F

0.64



Reverse current

I

R





Capacitance

C





Reverse recovery time trr *





Note: Reverse recovery time test circuit

0.8

V

I = 10 mA

F

0.1

µA

V = 30 V

R

3.0

pF

VR = 1 V, f = 1 MHz

4.0

ns

IF = IR = 10 mA, Irr = 1 mA

DC

Supply

Ro = 50Ω Pulse

Generator

0.1µF

3kΩ

Trigger

Sampling

Oscilloscope

Rin = 50Ω

Rev.2, Oct. 2000, page 2 of 5

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