1SS383 Ver la hoja de datos (PDF) - Toshiba
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1SS383 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS383
1SS383
Low Voltage High Speed Switching
z Small package
z Composed of 2 independent diodes.
z Low forward voltage: VF (3) = 0.54V (typ.)
z Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
45
V
40
V
300 *
mA
100 *
mA
1*
A
100 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
JEDEC
―
Operating temperature range
Topr
−40~100
°C
EIAJ
TOSHIBA
―
1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.006g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
V
― 0.36 ―
V
―
0.54 0.60
V
―
―
5
μA
―
18
25
pF
Pin Assignment (Top View)
Marking
1
2007-11-01
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