2SA1120 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SA1120 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A
VBE
Base-emitter on voltage
IC=-4A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-35V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE-1
DC current gain
IC=-500mA ; VCE=-2V
hFE-2
DC current gain
IC=-4A ; VCE=-2V
Cob
Output capacitance
IE=0 ; VCB=-10V f=1MHz
fT
Transition frequency
IC=-500mA ; VCE=-2V
Product Specification
2SA1120
MIN TYP. MAX UNIT
-35
V
-1.0
V
-1.5
V
-0.1 mA
-0.1 mA
200
70
62
pF
170
MHz
2
Share Link: 