2SA1385-ZK Ver la hoja de datos (PDF) - Renesas Electronics
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2SA1385-ZK Datasheet PDF : 6 Pages
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1385-Z
PNP SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SA1385-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES
• Low VCE(sat): VCE(sat) = −0.18 V TYP.
• Complement to 2SC3518-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse) Note
Total power dissipation (Tc = 25°C)
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT
Tj
Tstg
−60
V
−60
V
−7
V
−5
A
−7
A
10
W
150
°C
−55 to +150 °C
<R> PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18248EJ3V0DS00 (3rd edition)
(Previous No. TC-1632A)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
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