Ordering number:EN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display
Video Output Applications
Features
· High breakdown voltage (VCEO≥300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2042A
[2SA1480/2SC3790]
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre
VCB=(–)30V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
B : Base
C : Collector
E : Emitter
SANYO : TO-126ML
Ratings
Unit
(–)300 V
(–)300 V
(–)5 V
(–)100 mA
(–)200 mA
1.5 W
7W
150 ˚C
–55 to +150 ˚C
Ratings
min typ
40*
150
2.6
(3.1)
1.8
(2.3)
(–)300
(–)300
(–)5
max
(–)0.1
(–)0.1
320*
(–)0.6
(–)1.0
Unit
µA
µA
MHz
pF
pF
pF
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4087TA, TS No.2254-1/4