2SA1635 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SA1635

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1635

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-0.1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

VBE sat Base-emitter saturation voltage

IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-12V

MIN TYP. MAX UNIT

-80

V

-5

V

-1.5

V

-1.5

V

-10

μA

-10

μA

60

320

80

pF

12

MHz

‹ hFE Classifications

D

E

F

60-120 100-200 160-320

2

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