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2SA968A Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza
componentes Descripción
Fabricante
2SA968A
JMNIC
Quanzhou Jinmei Electronic 
2SA968A Datasheet PDF : 3 Pages
1 2 3
JMnic
Silicon PNP Power Transistors
Product Specification
2SA968 2SA968A 2SA968B
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA968
2SA968A IC=-10mA; IB=0
2SA968B
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-500mA ; VCE=-5V
VCB=-160V ;IE=0
VEB=-5V; IC=0
IC=-100mA ; VCE=-5V
Cob
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IC=-100mA ; VCE=10V
MIN TYP. MAX UNIT
-160
-180
V
-200
-5
V
-1.5
V
-1.0
V
-1.0
μA
-1.0
μA
70
240
30
pF
100
MHz
‹ hFE Classifications
O
Y
70-140
120-240
2

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