2SA969 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SA969

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA

VBE

Base-emitter on voltage

IC=-500mA ; VCE=-5V

ICBO

Collector cut-off current

VCB=-160V ;IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-100mA ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

fT

Transition frequency

IC=-100mA ; VCE=10V

‹ hFE Classifications

O

Y

70-140

120-240

Product Specification

2SA969

MIN TYP. MAX UNIT

-160

V

-5

V

-1.5

V

-1.0

V

-1.0 μA

-1.0 μA

70

240

30

pF

100

MHz

2

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