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Número de pieza
componentes Descripción
2SB1103 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SB1103
Silicon PNP Triple Diffused
Hitachi -> Renesas Electronics
2SB1103 Datasheet PDF : 7 Pages
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2SB1103
Typical Output Characteristics
–10
P
C
= 40 W
–2.5
–3.0
–8
–2.0
–1.5
–6
–1.0
–4
–0.5 mA
–2
T
C
= 25
°
C
I
B
= 0
0
–1
–2
–3
–4
–5
Collector to emitter voltage V
CE
(V)
Saturation Voltage vs.
Collector Current
–10
–3
–1.0
–0.3
V
BE(sat)
V
CE(sat)
200
500
500
I
C
/
I
B
= 200
30,000
10,000
3,000
1,000
300
100
DC Current Transfer Ratio vs.
Collector Current
Ta
= 75
°
C
25
–25
°
C
V
CE
= –3 V
Pulse
30
–0.1
–0.3
–1.0
–3
–10
Collector current I
C
(A)
Switching Time vs. Collector Current
10
t
stg
3
1.0
t
f
0.3
t
on
–0.1
–0.03
–0.01
–0.1
T
a
= 25
°
C
Pulse
–0.3
–1.0
–3
–10
Collector current I
C
(A)
0.1
Ta = 25
°
C
0.03
V
CC
= –30V
I
C
= 100 I
B1
= –100 I
B2
0.01
–0.1
–0.3
–1.0
–3
–10
Collector current I
C
(A)
4
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