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2SB1132L-R-TN3-R

MEDIUM POWER TRANSISTOR

Unisonic Technologies 

2SB1132

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-32

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

Collector Current (Single pulse, Pw=100ms) PULSE

IC

-1

A

-2

A

Collector Power Dissipation

SOT-89

TO-252

PC

0.5

W

1

W

Junction Temperature

Storage Temperature

TJ

TSTG

150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Note: Measured using pulse current.

SYMBOL

TEST CONDITIONS

BVCBO IC = -50μA

BVCEO IC = -1mA

BVEBO IE= -50μA

ICBO VCB= -20V

IEBO VEB= -4V

VCE(SAT) IC = -500mA,IB= -50mA (Note)

hFE VCE= -3V,IC = -0.1A (Note)

fT VCE= -5V, IE= 50mA, f=30MHz

COB VCB= -10V, IE=0A, f=1MHz

„ CLASSIFICATION OF hFE

MIN TYP MAX UNIT

-40

V

-32

V

-5

V

-0.5 μA

-0.5 μA

-0.2 -0.5 V

82

390

150

MHz

20 30 pF

RANK

RANGE

P

82-180

Q

120-270

R

180-390

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R208-016.C

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