2SB1103 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB1103

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1103

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞

-60

V

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA, IC=0

-7

V

VCEsat-1 Collector-emitter saturation voltage IC=-4A ,IB=-8mA

-1.5

V

VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA

-3.0

V

VBEsat-1 Base-emitter saturation voltage

IC=-4A ,IB=-8mA

-2.0

V

VBEsat-2 Base-emitter saturation voltage

IC=-8A ,IB=-80mA

-3.5

V

ICBO

Collector cut-off current

VCB=-60V, IE=0

-100 μA

ICEO

Collector cut-off current

固I电NC半H导A体NGE SEMICONDUCTOR hFE

DC current gain

VD

Diode forward voltage

Switching times

ton

Turn-on time

VCE=-50V, RBE=∞

IC=-4A ; VCE=-3V

ID=8A

1000

-10 μA

3.0

V

0.5

μs

tstg

Storage time

IC=-4A ,IB1=-IB2=-8mA

3.0

μs

tf

Fall time

1.0

μs

2

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