2SB1495 Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Fabricante
2SB1495 Datasheet PDF : 4 Pages
| |||
−4
Common emitter
Tc = 25°C
−3
IC – VCE
−1000
−800
−500
−400
−2
−300
−250
−1
IB = −200 μA
0
0
−1
−2
−3
−4
−5
Collector-emitter voltage VCE (V)
10000
hFE – IC
5000
3000
1000
Tc = 100°C
25
−55
500
300
100
−0.03
Common emitter
VCE = −2 V
−0.1
−0.3
−1
−3 −5 −10
Collector current IC (A)
2SB1495
IC – VBE
−3.0
Common emitter
−2.5 VCE = −2 V
−2.0
−1.5
−1.0
−0.5
Tc = 100°C 25 −55
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
Base-emitter voltage VBE (V)
VCE (sat) – IC
−5
Common emitter
IC/IB = 1000
−3
Tc = −55°C
−1
25
100
−0.5
−0.3 −0.5
−1
−3
−5
Collector current IC (A)
VBE (sat) – IC
−5
Common emitter
IC/IB = 1000
−3
Tc = −55°C
25
−1
100
−0.5
−0.3 −0.5
−1
−3
−5
Collector current IC (A)
Safe Operating Area
−5
IC max (pulsed)*
−3
−1
−0.5
−0.3
10 ms*
1 ms*
100 μs*
*: Single nonrepetitive pulse
−0.1
Tc = 25°C
−0.05 Curves must be derated linearly
−0.03 with increase in temperature.
VCEO max
−0.3
−1
−3
−10
−30
−100
Collector-emitter voltage VCE (V)
−300
3
2006-11-21
Share Link: 