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B1340

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1340

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0

-120

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μA ; IE= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -6mA

ICBO

Collector Cutoff Current

VCB= -120V ; IE= 0

-1.5

V

-100 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-3

mA

hFE

DC Current Gain

IC= -2A ; VCE= -3V

2000

20000

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

70

fT

Current-Gain—Bandwidth Product

IE= 0.5A ; VCE= -5V; ftest= 10MHz

12

pF

MHz

isc Website：www.iscsemi.cn

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