2SB1382 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB1382

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1382

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -16mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -8A; IB=B -16mA

ICBO

Collector Cutoff Current

VCB= -120V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

hFE

DC Current Gain

IC= -8A ; VCE= -4V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

Switching Times

IE= 0; VCB= -10V; ftest= 1MHz

IE= 1A ; VCE= -12V

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

VCC= -40V, RL= 5Ω,

IC= -8A; IB1= -IB2= -16mA,

MIN TYP. MAX UNIT

-120

V

-1.5 V

-2.5 V

-10 μA

-10 mA

2000

350

pF

50

MHz

0.8

μs

1.8

μs

1.0

μs

isc Website：www.iscsemi.cn

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